1999. 11. 30 1/1 semiconductor technical data bc849/850 epitaxial planar npn transistor revision no : 2 general purpose application. switching application . features for complementary with pnp type bc859/860. maximum rating (ta=25 1 ) dim millimeters 1. emitter 2. base 3. collector sot-23 a b c d e 2.93 0.20 1.30+0.20/-0.15 0.45+0.15/-0.05 2.40+0.30/-0.20 g 1.90 h j k l m n 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 min 1.00+0.20/-0.10 m j k e 1 2 3 h g a n c b d 1.30 max ll pp p7 + _ electrical characteristics (ta=25 1 ) note : h fe classification b:200 450, c:420 800 characteristic symbol test condition min. typ. max. unit collector-emitter breakdown voltage bc849 v (br)ceo i c =10ma, i b =0 30 - - v BC850 45 - - collector-base breakdown voltage bc849 v (br)cbo i c =10 a, i e =0 30 - - v BC850 50 - - emitter-base breakdown voltage v (br)ebo i e =10 a, i c =0 5 - - v collector cut-off current i cbo v cb =30v, i e =0 - - 15 na dc current gain h fe (note) i c =2ma, v ce =5v 200 - 800 base-emitter voltage v be(on) 1 i c =2ma, v ce =5v 0.58 0.66 0.7 v v be(on) 2 i c =10ma, v ce =5v - - 0.77 collector-emitter saturation voltage v ce(sat) 1 i c =10ma, i b =0.5ma - 0.09 0.25 v v ce(sat) 2 i c =100ma, i b =5ma - 0.2 0.6 base-emitter saturation voltage v be(sat) 1 i c =10ma, i b =0.5ma - 0.7 - v v be(sat) 2 i c =100ma, i b =5ma - 0.9 - transition frequency f t i c =10ma, v ce =5v, f=100mhz - 300 - mhz collector output capacitance c ob v cb =10v, i e =0, f=1mhz - 2.5 4.5 pf noise figure bc849 nf i c =200 a, v ce =5v rg=10k u , f=1khz - - 4.0 db BC850 - - 1.0 characteristic symbol rating unit collector-base voltage bc849 v cbo 30 v BC850 50 collector-emitter voltage bc849 v ceo 30 v BC850 45 emitter-base voltage v ebo 5 v collector current i c 100 ma collector power dissipation p c * 350 mw junction temperature t j 150 1 storage temperature range t stg -55 150 1 p c * : package mounted on 99.5% alumina 10 ' 8 ' 0.6mm. type bc849b bc849c BC850b BC850c mark 2b 2c 2f 2g mark spec type name marking lot no.
|
